Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P concentration of 3.7 × 1020 cm-3 at the heterointerface in the Si- cap/P/Si-substrate layer stacks is achieved. Due to As desorption and segregation toward the Si surface during the temperature ramp up and during the Si-cap growth, the As concentration at the heterointerface in the Si-cap/As/Si-substrate layer stacks was lower compared to the P case. These results allowed us to evaluate the feasibility of the VPD process to fabricate precisely controlled doping profiles.
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机译：使用气相掺杂（VPD）技术将磷（P）和砷（As）原子层掺杂到Si中。为了增加沉积时间和前驱体气体流速，P和As剂量倾向于分别在约0.8和1.0的单层Si处饱和。因此，在两种情况下，这些过程都是自限的。当在盖有P的Si（001）上生长Si盖层时，在Si-cap / P / Si衬底层堆叠中的异质界面处可获得3.7×1020 cm-3的高P浓度。由于在温度升高和硅盖生长期间砷向硅表面的解吸和偏析，与P情况相比，硅盖/ As /硅衬底叠层中异质界面处的砷浓度较低。这些结果使我们能够评估VPD工艺制造精确控制的掺杂分布的可行性。
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